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Application of NRA to evaluation of boron implants in Si for shallow junctions

โœ Scribed by M. Suzuki; M. Tomita; A. Murakoshi


Book ID
114165530
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
81 KB
Volume
190
Category
Article
ISSN
0168-583X

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Laser annealing of plasma implanted boro
โœ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured