The thickness dependence of the in-plane uniaxial anisotropy and coercive field of epitaxial MnAs thin films on GaAs (0 0 1) substrates has been determined from the magneto-optic Kerr effect. The metalorganic vapor phase epitaxy grown films are single a phase at room temperature with a B-type varian
β¦ LIBER β¦
AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response
β Scribed by M.M. Habchi; A. Rebey; B. El Jani
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 911 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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