✦ LIBER ✦

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

✍ Scribed by Zhang, M. H.; Guo, L. W.; Li, H. W.; Li, W.; Huang, Q.; Bao, C. L.; Zhou, J. M.; Liu, B. L.; Xu, Z. Y.; Zhang, Y. H.; Lu, L. W.

Book ID: 118004505
Publisher: The American Physical Society
Year: 2001
Tongue: English
Weight: 97 KB
Volume: 63
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.63.115324

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Variable energy positron beam characteri

Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs

✍ M. T. Umlor; D. J. Keeble; P. W. Cooke; P. Asoka-Kumar; K. G. Lynn 📂 Article 📅 1993 🏛 Springer US 🌐 English ⚖ 369 KB

Native point defects in low‐temperature‐

Native point defects in low‐temperature‐grown GaAs

✍ Liu, X.; Prasad, A.; Nishio, J.; Weber, E. R.; Liliental‐Weber, Z.; Walukiewicz, 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 319 KB

Gallium vacancy related defects in silic

Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

✍ S.A. McQuaid; R.E. Pritchard; R.C. Newman; S. O'Hagan; M. Missous 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 310 KB

Low temperature annealing of neutron and

Low temperature annealing of neutron and gamma induced defects in KBr

✍ P.R. Hanley; A.W. Haberl; A. Taylor 📂 Article 📅 1968 🏛 Elsevier Science 🌐 English ⚖ 352 KB

Effect of annealing on the nonequilibriu

Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

✍ Pastor, A. A.; Prokhorova, U. V.; Serdobintsev, P. Yu.; Chaldyshev, V. V.; Yagov 📂 Article 📅 2013 🏛 Springer 🌐 English ⚖ 263 KB

Evolution of radiation-induced carbon–ox

Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies

✍ L.I. Murin; J.L. Lindström; G. Davies; V.P. Markevich 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 250 KB