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Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

✍ Scribed by S.A. McQuaid; R.E. Pritchard; R.C. Newman; S. O'Hagan; M. Missous


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
310 KB
Volume
22
Category
Article
ISSN
0921-5107

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