Annealing effects on electrical, structural, and surface morphological properties of Ir/n-InGaN Schottky structures
✍ Scribed by Reddy, V. Rajagopal ;Padma, R. ;Reddy, M. Siva Pratap ;Choi, C.-J.
- Book ID
- 112181093
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 786 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measure
## Abstract Thermal annealing effects on the electrical and structural properties of Ni/Mo Schottky contacts on n‐type GaN have been investigated by current–voltage (__I–V__), capacitance–voltage (__C–V__), Secondary ion mass spectrometer (SIMS), and X‐ray diffraction (XRD) techniques. The extracte
## Abstract The effects of rapid thermal annealing on the electrical and structural properties of Ru/n‐InP Schottky diode have been investigated by current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), X‐ray diffraction (XRD) and secondary ion‐mass spectroscopy (SIMS) techniques. Result