## Abstract We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (__I__–__V__), capacitance–voltage (__C__–__V__), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measure
Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure
✍ Scribed by A. Ashok Kumar; V. Janardhanam; V. Rajagopal Reddy
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 548 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
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