✦ LIBER ✦

Annealing effect on the photoluminescence of Si nanocrystallites thin films

✍ Scribed by Kyung Ah Jeon; Jong Hoon Kim; Jin Baek Choi; Kyoung Bo Han; Sang Yeol Lee

Book ID: 108215877
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 310 KB
Volume: 23
Category: Article
ISSN: 0928-4931
DOI: 10.1016/j.msec.2003.09.157

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Radiation effect on the photoluminescenc

Radiation effect on the photoluminescence properties of Si/SiO2 thin films

✍ Kun Zhong; Zhisong Xiao; Xiangqian Cheng; Fang Zhu; Lu Yan; Feng Zhang; Guoan Ch 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 390 KB

Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)

Effect of thermal annealing on the photo

Effect of thermal annealing on the photoluminescence of β-FeSi2 films on Si substrate

✍ Kenji Yamaguchi; Kenichiro Shimura; Haruhiko Udono; Masato Sasase; Hiroyuki Yama 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 322 KB

Oxidation effects on the photoluminescen

Oxidation effects on the photoluminescent properties of Si nanocrystalline thin films

✍ Kyung Ah Jeon; Jong Hoon Kim; Gun Hee Kim; Sang Yeol Lee 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 321 KB

Annealing effect on the photoluminescenc

Annealing effect on the photoluminescence of Ge-doped silica films

✍ A.G. Rolo; A. Chahboun; O. Conde; M.I. Vasilevskiy; M.J.M. Gomes 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 270 KB

Annealing effect on photoluminescence of

Annealing effect on photoluminescence of Tb-doped AlBON films

✍ Keiko Masumoto; Chiharu Kimura; Hidemitsu Aoki; Takashi Sugino 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 666 KB

Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 °C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measur

Annealing Effect of Mn thin Films on GaA

Annealing Effect of Mn thin Films on GaAs

✍ Anupama Chanda; H. P. Lenka; Chacko Jacob 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 367 KB