Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 Β°C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measur
β¦ LIBER β¦
Annealing effect on the photoluminescence of Ge-doped silica films
β Scribed by A.G. Rolo; A. Chahboun; O. Conde; M.I. Vasilevskiy; M.J.M. Gomes
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 270 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1386-9477
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