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Annealing effect on photoluminescence of Tb-doped AlBON films

✍ Scribed by Keiko Masumoto; Chiharu Kimura; Hidemitsu Aoki; Takashi Sugino

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
666 KB
Volume
150
Category
Article
ISSN
0038-1098

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✦ Synopsis

Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 Β°C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measurement suggests that Tb 4+ ions decrease compared with Tb 3+ ions after annealing treatment. Oxygen atoms in the AlBON:Tb film are dissociated from Tb and bonded to boron atoms by annealing treatment. It is possible that decrease in Tb 4+ ions leads to increase in the PL intensity by annealing treatment.

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