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Annealing effect on physical and electrical characteristics of thin HfO2, HfSixOy and HfOyNz films on Si

✍ Scribed by Joo-Hyung Kim; Velislava A. Ignatova; Martin Weisheit

Book ID: 104052095
Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 537 KB
Volume: 86
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2008.11.012

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