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Annealing behavior of photoconductance relating to electron-irradiation-induced defects in semi-insulating GaAs

✍ Scribed by Kuriyama, K.; Takahashi, Hirokazu; Irie, Y.; Kawakubo, T.

Book ID
120624303
Publisher
American Institute of Physics
Year
1991
Tongue
English
Weight
621 KB
Volume
70
Category
Article
ISSN
0021-8979

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Electron-irradiation induced defects in semi-insulating (SI) InP wafers with Fe concentration ranging from 1.5 Β£ 10 15 to 2.5 Β£ 10 15 cm 23 , which have been obtained by multiple-step wafer annealing (MWA) under phosphorus vapor pressure, were studied using a thermally stimulated current (TSC) metho