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Annealing behavior of high temperature implanted Fe impurities in n-InP

✍ Scribed by T. Cesca; A. Gasparotto; B. Fraboni; F. Priolo


Book ID
113822675
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
271 KB
Volume
216
Category
Article
ISSN
0168-583X

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Incorporation of active Fe impurities in
✍ T. Cesca; A. Gasparotto; A. Verna; B. Fraboni; G. Impellizzeri; F. Priolo; L. Ta πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 148 KB

Single GaInP layers, grown by MOVPE lattice matched to GaAs, were implanted with Fe at T = 200 Β°C and annealed at 450 or 600 Β°C. The role of implantation temperature and fluence in determining the crystal damage, and the damage recovery by annealing are investigated by RBS-channeling measurements. T