✦ LIBER ✦

High-resistivity layers in n-InP produced by Fe ion implantation

✍ Scribed by J.P. Donnelly; C.E. Hurwitz

Book ID: 107856370
Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 317 KB
Volume: 21
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(78)90282-4

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High resistivity layer formation in InP

High resistivity layer formation in InP by ion implantation for ohmic contact characterization

✍ J Jakabovič 📂 Article 📅 1986 🏛 Elsevier Science 🌐 English ⚖ 234 KB

Local structure of Fe incorporated in Ga

Local structure of Fe incorporated in GaInP layers by high temperature ion implantation

✍ T. Cesca; A. Gasparotto; G. Mattei; B. Fraboni; F. Boscherini; M. Longo; L. Tarr 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 152 KB

Properties of oxide and nitride layers i

Properties of oxide and nitride layers in aluminium produced by high dose ion implantation

✍ Shigeo Ohira; Masaya Iwaki 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 652 KB

Recent advances in high dose ion implantation The surface properties such as depth profile, techniques have produced silicon-on-insulator chemical bond and structure, and electrical prop-(SOI) substrates for the fabrication of electronic erties of oxide and nitride layers in aluminium devices. Oxyge

Oxidation inhibiting properties of Si3N4

Oxidation inhibiting properties of Si3N4-layers produced by ion implantation

✍ M. Ramin; H. Ryssel; H. Kranz 📂 Article 📅 1980 🏛 Springer 🌐 English ⚖ 560 KB

Damaged-induced isolation in n-type InP

Damaged-induced isolation in n-type InP by light-ion implantation

✍ P.E. Thompson; S.C. Binari; H.B. Dietrich 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 408 KB

High resistivity layer formation in InP

High resistivity layer formation in InP by ion implantation for ohmic contact characterization : J. Jakobovic. Vacuum36(7–9), 489 (1986)

📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 133 KB