Anomalous annealing behavior of isolated
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S.E. Donnelly; R.C. Birtcher; V.M. Vishnyakov; P.D. Edmondson; G. Carter
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Article
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2006
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Elsevier Science
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English
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The formation and annealing of individual amorphous zones in silicon have been studied using in situ transmission electron microscopy. This technique enables us to identify anomalous behavior that cannot be deduced from statistical studies. Zones were formed at room temperature by impacts of single