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Annealing and deposition effects of the chemical composition of silicon-rich nitride

✍ Scribed by K.N. Andersen; W.E. Svendsen; T. Stimpel-Lindner; T. Sulima; H. Baumgärtner


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
292 KB
Volume
243
Category
Article
ISSN
0169-4332

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✍ M. Matsuoka; S. Isotani; W. Sucasaire; L.S. Zambom; K. Ogata 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 560 KB

Thin silicon nitride films were prepared at 350 °C by inductively coupled plasma chemical vapor deposition on Si(100) substrates under different NH 3 /SiH 4 or N 2 /SiH 4 gas mixture. The chemical composition and bonding structure of the deposited films were investigated as a function of the process