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Anisotropic characteristics of a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by MOCVD

✍ Scribed by Tingting Jia; Shengming Zhou; Hao Teng; Hui Lin; Jun Wang; Jianqi Liu; Yongxin Qiu; Jun Huang; Kai Huang; Feng Bao; Ke Xu

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
699 KB
Volume
257
Category
Article
ISSN
0169-4332

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