✦ LIBER ✦

Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs

✍ Scribed by C.T Hsu; M.M Lau; Y.T Yeow

Book ID: 108361800
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 390 KB
Volume: 41
Category: Article
ISSN: 0026-2714
DOI: 10.1016/s0026-2714(00)00222-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A new gate current measurement technique

A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

✍ S.E Leang; W.K Chim; D.S.H Chan 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 680 KB

A simple and direct technique for interf

A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs

✍ Aatish Kumar; Rakesh Lal; V.Ramgopal Rao 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 159 KB

A new self-consistent model for the anal

A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

✍ A. Valletta; L. Mariucci; A. Pecora; G. Fortunato; J.R. Ayres; S.D. Brotherton 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 177 KB

A calibration technique for multiple-sen

A calibration technique for multiple-sensor hot-wire probes and its application to vorticity measurements in the wake of a circular cylinder

✍ B. Marasli; P. Nguyen; J. M. Wallace 📂 Article 📅 1993 🏛 Springer 🌐 English ⚖ 764 KB

A calibration technique for multiple-sensor hot-wire probes is presented. The technique, which requires minimal information about the probe geometry, is tested using a four-sensor and a twelve-sensor probe. Two data reduction algorithms are introduced. The first one assumes a uniform velocity over t

[IEEE 2012 19th IEEE International Sympo

[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Charge-pumping extraction techniques for hot-carrier induced interface and oxide trap spatial distributions in MOSFETs

✍ Starkov, I.; Enichlmair, H.; Tyaginov, S.; Grasser, T. 📂 Article 📅 2012 🏛 IEEE ⚖ 572 KB