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A new self-consistent model for the analysis of hot-carrier induced degradation in lightly doped drain (LDD) and gate overlapped LDD polysilicon TFTs

✍ Scribed by A. Valletta; L. Mariucci; A. Pecora; G. Fortunato; J.R. Ayres; S.D. Brotherton


Book ID
108388546
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
177 KB
Volume
427
Category
Article
ISSN
0040-6090

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