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Analysis of the deep depletion MOSFET and the use of the d.c. characteristics for determining bulk-channel charge-coupled device parameters

✍ Scribed by Roger A. Haken

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 816 KB
Volume: 21
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(78)90008-4

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