Analysis of morphology of porous silicon layers using Flicker noise spectroscopy
β Scribed by Parkhutik, V. ;Collins, B. ;Sailor, M. ;Vstovsky, G. ;Timashev, S.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 284 KB
- Volume
- 197
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Scanning probe microscopy is presently a useful tool to study a morphology of porous semiconductors. However, it serves to visualize existing roughness features of porous samples rather then to obtain some analytical data on shape, diameter and other geometrical parameters of the pores.
The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. Th