𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of morphology of porous silicon layers using Flicker noise spectroscopy

✍ Scribed by Parkhutik, V. ;Collins, B. ;Sailor, M. ;Vstovsky, G. ;Timashev, S.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
284 KB
Volume
197
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Quantification of cross-sectional morpho
✍ Parkhutik, Vitali ;Makusok, Yuri ;Inumaru, Kei ;Harima, Yutaka πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 230 KB

## Abstract Scanning probe microscopy is presently a useful tool to study a morphology of porous semiconductors. However, it serves to visualize existing roughness features of porous samples rather then to obtain some analytical data on shape, diameter and other geometrical parameters of the pores.

Morphology of Porous Silicon Layers Dedu
✍ J. Diener; D. Kovalev; G. Polisski; N. KΓΌnzner; F. Koch πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 90 KB πŸ‘ 1 views

The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. Th