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Morphology of Porous Silicon Layers Deduced from Polarization Memory Experiments

✍ Scribed by J. Diener; D. Kovalev; G. Polisski; N. Künzner; F. Koch


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
90 KB
Volume
224
Category
Article
ISSN
0370-1972

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✦ Synopsis


The morphology of porous silicon layers has been investigated by polarization resolved photoluminescence measurements in different geometrical arrangements. A uniaxial alignment of the long ellipsoidal axis of the aspheric Si nanocrystallites (NCs) parallel to the [100] growth direction is found. This overall orientation of the NCs is randomized with decreasing size of the NCs.