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Analysis of ion-implanted silicon using high-resolution X-ray diffraction

✍ Scribed by A. Pesek


Publisher
Springer
Year
1994
Tongue
English
Weight
667 KB
Volume
58
Category
Article
ISSN
1432-0630

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High resolution X-ray diffraction analys
✍ Matyi, R. J. ;Jamil, M. ;Shahedipour-Sandvik, F. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 478 KB

## Abstract High resolution triple‐axis X‐ray diffraction has been used to characterize the effects of nitrogen ion implantation into thin (15 nm and 55 nm) AlN buffer layers on the resultant structural quality of nominally 2 ΞΌm epitaxial GaN layers grown on silicon substrates. The GaN symmetric (0