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Analysis of implantation-induced damage and amorphization of GaSb

โœ Scribed by Zheng, Yuxiang ;Chen, Liangyao ;Zhou, Shiming ;Wang, Yadong ;Qian, Youhua ;Lin, Chenglu ;He, Zhiping ;Zheng, Ansheng ;Li, Jianming


Book ID
105385123
Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
382 KB
Volume
157
Category
Article
ISSN
0031-8965

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Radiation damage and amorphization of si
โœ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by