𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis of depth redistribution of implanted Fe near SiO2/Si interface

✍ Scribed by Hoshino, Y.; Yokoyama, A.; Yachida, G.; Nakata, J.

Book ID
120486454
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
520 KB
Volume
314
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Thermodynamic approach to the redistribu
Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system
✍ F. RΓ©ti; Z. Sassi; L. Kaabi; J.-C. Bureau; H. Vincent; B. Balland πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 79 KB πŸ‘ 2 views

In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron inwards in the crystal, hindering the formation of

Analysis of N isotope depth profiles in
Analysis of N isotope depth profiles in search for reaction of implanted nitrogen with substrate near Si3N4–nitride-film and SiO2-glass-substrate interface
✍ N. Matsunami; T. Murase; M. Tazawa; S. Ninad; O. Fukuoka; T. Shimura; M. Sataka; πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 319 KB

We have measured depth profiles of N isotopes by Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA) before and after implantation of 100 keV N isotopes into Si 3 N 4 films on SiO 2 -glass substrates, which were prepared by using RF-magnetron-reactive-sputtering depositi