Ion beam analysis of the SiO2/SiC interf
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G.V. Soares; F. Trombetta; P. SchΓΌtz; I.J.R. Baumvol; C. Radtke; F.C. Stedile
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Article
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2006
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Elsevier Science
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English
β 152 KB
Thermal oxidation of 6H-SiC was investigated by ion beam analysis techniques. The mechanisms of oxygen transport and incorporation were accessed by sequential oxidations in dry O 2 enriched or not in the 18 O isotope and subsequent determinations of the 18 O profiles. After sequential 16 O 2 / 18 O