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Analysis and modelling of lateral heterostructure field-effect bipolar transistors

✍ Scribed by Zi-En Ooi; Samarendra P. Singh; Serene L.G. Ng; Gregory K.L. Goh; Ananth Dodabalapur


Book ID
113834327
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
432 KB
Volume
12
Category
Article
ISSN
1566-1199

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## Abstract We report the first microwave performance of single crystalline ZnO/ZnMgO heterostructure field‐effect transistors (HFETs). The structure consisted of a 15‐nm‐thick ZnO channel layer was grown by molecular beam epitaxy (MBE) on an __a__‐sapphire substrate. Two‐finger type HFETs with 1 o