𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analysis and design of common-gate low-noise amplifier for wideband applications

✍ Scribed by Jouni Kaukovuori; Mikko Kaltiokallio; Jussi Ryynänen

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
548 KB
Volume
37
Category
Article
ISSN
0098-9886

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Alternative approach to low-noise amplif
Alternative approach to low-noise amplifier design for ultra-wideband applications
✍ Qiang Li; Y. P. Zhang 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 388 KB

Conventional ultra-wideband low-noise amplifiers require a flat gain over the entire 3.1-10.6 GHz bandwidth, which severely restraints the trade-off spaces in low noise amplifier design. This article proposes a relaxed gain-flatness requirement based on system level investigations. Considering the w

Design and analysis of a compact ultra-w
Design and analysis of a compact ultra-wideband CMOS low-noise amplifier
✍ Nackgyun Seong; Yohan Jang; Jaehoon Choi 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 371 KB

## Abstract In this letter, we proposed a low power, high gain, compact ultra‐wideband (UWB) low noise amplifier (LNA) using TSMC 0.18‐μm CMOS technology.To satisfy the wide input matching and high voltage gain requirements with low power consumption, a resistive current reused technique is utilize

A low noise 3.1 10.6 GHz pMOS distribute
A low noise 3.1 10.6 GHz pMOS distributed amplifier for ultra-wideband applications
✍ Chien-Cheng Wei; Hsien-Chin Chiu; Wu-Shiung Feng 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 249 KB

## Abstract A low noise pMOS distributed amplifier for Ultra‐wideband (UWB) application is presented in this study. The amplifier is a two‐stage design fabricated in a standard 0.18‐μm CMOS process. The pMOS‐based distributed amplifier as input stage is used to achieve a better noise figure and a w

1.8-V 3.1–10.6-GHz CMOS low-noise amplif
1.8-V 3.1–10.6-GHz CMOS low-noise amplifier for ultra-wideband applications
✍ Yang Lu; Kiat Seng Yeo; Jian Guo Ma; Manh Anh Do; Zhenghao Lu 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 141 KB

## Abstract A novel CMOS low‐noise amplifier (LNA) for 3.1–10.6‐GHz ultra‐wideband (UWB) applications is presented in this paper. As opposed to most of the previously reported UWB LNAs, which are based on SiGe technology, the proposed UWB LNA is designed based on chartered semiconductor manufacturi

Analysis and design of a fully integrate
Analysis and design of a fully integrated CMOS low-noise amplifier for concurrent dual-band receivers
✍ Y. P. Zhang; K. W. Chew; P. F. Wong 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 204 KB

This article thoroughly analyzes a concurrent dual-band low-noise amplifier (LNA) and carefully examines the effects of both active and passive elements on the performance of the dual-band LNA. As an example of the analysis, a fully integrated dual-band LNA is designed in a standard 0.18-m 6M1P CMOS

0.7 V supply highly linear subthreshold
0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications
✍ Hee-Sauk Jhon; Hakchul Jung; Minsuk Koo; Ickhyun Song; Hyungcheol Shin 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 381 KB

## Abstract A low supply voltage and highly linear subthreshold CMOS low noise amplifier (LNA) for 2.4 GHz wireless sensor network applications is presented in this letter. We applied multiple gated transistor (MGTR) technique in subthreshold region to compensate the linearity degradation of low su