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An investigation of the hydrogenated Si-SiO2 interface by X-ray diffraction

✍ Scribed by Rzhanov, A.E.; Filippov, V.I.; Chaplanov, V.A.; Yakimov, S.S.


Book ID
122557862
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
223 KB
Volume
6
Category
Article
ISSN
0167-577X

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Investigation of an Mo/SiO2 interface by
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We have studied the solid/solid interface between Mo and SiO 2 films deposited, respectively, by magnetron d.c. sputtering and plasma-enhanced chemical vapour deposition (PECVD). The sample depth profile was characterized by SIMS. We used electron-induced x-ray emission spectroscopy to characterize