## Abstract The energies of photoelectron and Auger lines of gallium and nitrogen in GaN thin films obtained by reactive sputtering are derived. From previous RBS investigations, such were found to be stoichiometric in the bulk. The XPS surface analysis of the films gives a chemical content of βΌ20%
β¦ LIBER β¦
An in situ XPS study of sputter-deposited aluminium thin films on graphite
β Scribed by C. Hinnen; D. Imbert; J.M. Siffre; P. Marcus
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 874 KB
- Volume
- 78
- Category
- Article
- ISSN
- 0169-4332
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