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An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)

✍ Scribed by Hefner, A.R.

Book ID: 121207619
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 962 KB
Volume: 5
Category: Article
ISSN: 0885-8993
DOI: 10.1109/63.60690

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