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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)

✍ Scribed by Udrea, F.; Amaratunga, G.A.J.

Book ID: 126998947
Publisher: Inst. Electr. Eng. Japan
Year: 1995
Weight: 553 KB
Category: Article
ISBN-13: 9780780326187
DOI: 10.1109/ispsd.1995.515033

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