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[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A unified analytical model for the carrier dynamics in trench insulated gate bipolar transistors (TIGBT)

โœ Scribed by Udrea, F.; Amaratunga, G.A.J.


Book ID
126998947
Publisher
Inst. Electr. Eng. Japan
Year
1995
Weight
553 KB
Category
Article
ISBN-13
9780780326187

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