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An analytical model for GAA transistors

✍ Scribed by A. Terao; F. Van de Wiele


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
175 KB
Volume
15
Category
Article
ISSN
0167-9317

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A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have