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A new simple analytical emitter model for bipolar transistors

✍ Scribed by C.R. Selvakumar; D.J. Roulston


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
585 KB
Volume
30
Category
Article
ISSN
0038-1101

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## Abstract In this paper, we present a model for double heterojunction bipolar transistors (DHBTs) that takes into account Fermi–Dirac statistics as well as an arbitrary injection level. The most commonly used models in the literature for heterojunction bipolar transistors (HBTs), bipolar junction