Amorphous silicon and amorphous silicon nitride films prepared by a plasma-enhanced chemical vapor deposition process as optical coating materials
✍ Scribed by Tsai, Rung-Ywan ;Kuo, Lee-Chin ;Ho, Fang Chuan
- Book ID
- 115343008
- Publisher
- The Optical Society
- Year
- 1993
- Tongue
- English
- Weight
- 618 KB
- Volume
- 32
- Category
- Article
- ISSN
- 1559-128X
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Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the
## Abstract We proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and