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Amorphization of silicon by ion implantation: Homogeneous or heterogeneous nucleation?

โœ Scribed by Dennis, John R.; Hale, Edward B.


Book ID
120201510
Publisher
Informa UK (Taylor & Francis)
Year
1976
Weight
556 KB
Volume
30
Category
Article
ISSN
0033-7579

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๐Ÿ“œ SIMILAR VOLUMES


Radiation damage and amorphization of si
โœ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by