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Ambient-dried low dielectric SiO2 aerogel thin film

โœ Scribed by Hee-Sun Yang; Se-Young Choi; Sang-Hoon Hyun; Hyung-Ho Park; Jung-Kyun Hong


Book ID
117148528
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
330 KB
Volume
221
Category
Article
ISSN
0022-3093

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Evaluation of SiO2 aerogel thin film wit
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The material and dielectric properties of SiO 2 aerogel thin films were studied. These films were fabricated by spin coating and a subsequent supercritical drying method. Film porosity was evaluated as 67% with Rutherford backscattering spectrometry and its dielectric constant was measured to be 2.1

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SiO aerogel film has a promising property as intermetal dielectrics (IMD) for its low dielectric constant. 2 However, a stable and porous SiO aerogel film was not properly synthesized due to the rapid evaporation of 2 solvent during spin coating even in a solvent saturated atmosphere. So less evapor