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Aluminum oxide tunnel barriers for single electron memory devices

✍ Scribed by Kameshwar K. Yadavalli; Alexei O. Orlov; Gregory L. Snider; Jeffrey Elam


Book ID
104050954
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
164 KB
Volume
36
Category
Article
ISSN
0026-2692

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Towards a circuit theory for metallic si
✍ J. Hoekstra πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 253 KB

## Abstract A circuit theory for metallic single‐electron tunnelling (SET) junctions is presented. In detail circuits with a single SET junction in arbitrary environments are described. Based on the conservation of energy in the circuitsβ€”a fundamental circuit theoremβ€”equivalent circuit elements are