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Investigation of niobium oxide-barrier tunnel junctions for use in microwave receiving devices

✍ Scribed by A.N. Vystavkin; V.N. Gubankov; K.I. Konstantinyan; V.P. Koshelets; Yu.V. Obukhov


Book ID
103810041
Publisher
Elsevier Science
Year
1982
Weight
239 KB
Volume
109-110
Category
Article
ISSN
0378-4363

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Atomic Layer Deposition (ALD) was used for the deposition of tantalum oxide thin films in order to be integrated in microelectronic devices as barrier to copper diffusion. The influence of deposition temperature, number of cycles and precursor pulse time on the film growth was discussed. The conform