𝔖 Bobbio Scriptorium
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Alloys for GaAs devices

✍ Scribed by J.R. Dale; M.J. Josh

Publisher
Elsevier Science
Year
1964
Tongue
English
Weight
330 KB
Volume
7
Category
Article
ISSN
0038-1101

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## Abstract A compact physics‐based transit‐time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit‐time frequency versus bias (__I__~__C__~, __V__~__CE__~), especially at low‐ and medium‐current regimes. Starting with the HICUM model, we introduce a ne