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MOMBE GaAs and AlGaAs for microelectronic devices

โœ Scribed by S.D. Hersee; L. Yang; M. Kao; P. Martin; J. Mazurowski; A. Chin; J. Ballingall

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
911 KB
Volume
120
Category
Article
ISSN
0022-0248

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Growth and characterization of AlGaAs/Ga
Growth and characterization of AlGaAs/GaAs Bragg reflectors for non-linear optoelectronic devices
โœ F. Scheffer; M. Joseph; W. Prost; F.J. Tegude; H. Lakner; S. Zumkley; G. Wingen; ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 374 KB

Using a low-pressure metal-organic vapour phase epitaxy reactor, Bragg reflector structures were grown consisting of an AIGaAs/GaAs multilayer stack with up to 20 periods on top of a GaAs substrate. Each layer exhibited a constant optical length of a quarter of the desired wavelength. The numerical