✦ LIBER ✦

Evidence for acceptor surface states in GaAs planar-type devices

✍ Scribed by P. Dansas; M. Bouchemat; C. Bru; D. Pascal; S. Laval

Publisher: Elsevier Science
Year: 1988
Tongue: English
Weight: 663 KB
Volume: 31
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(88)90433-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Evidence for acceptor surface states in

Evidence for acceptor surface states in GaAs planar-type devices : P. Dansas, M. Bouchemat, C. Bru, D. Pascal and S. Laval. Solid-St. Electron. 31, 1327 (1988)

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 129 KB

Evidence for interlayer donor–acceptor r

Evidence for interlayer donor–acceptor recombination in type II GaAs/AlAs superlattices

✍ K.S. Zhuravlev; D.A. Petrakov; A.M. Gilinsky; T.S. Shamirzaev; V.V. Preobrazhens 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 160 KB

Steady-state and time-resolved photoluminescence of (GaAs) 7 (AlAs) 9 type II superlattices grown simultaneously by molecular beam epitaxy on (311)A and (100) GaAs substrates, intentionally undoped or uniformly doped with silicon, has been studied. It is shown that at temperatures T > 30 K, the domi