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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

✍ Scribed by Sarazin, N.; Morvan, E.; di Forte Poisson, M.A.; Oualli, M.; Gaquiere, C.; Jardel, O.; Drisse, O.; Tordjman, M.; Magis, M.; Delage, S.L.

No coin nor oath required. For personal study only.

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