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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

✍ Scribed by Haifeng Sun, ; Alt, A.R.; Benedickter, H.; Bolognesi, C.R.; Feltin, E.; Carlin, J.-F.; Gonschorek, M.; Grandjean, N.; Maier, T.; Quay, R.

Book ID: 126486070
Publisher: IEEE
Year: 2009
Tongue: English
Weight: 346 KB
Volume: 30
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2023603

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