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AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz

✍ Scribed by Minko, A.; Hoel, V.; Morvan, E.; Grimbert, B.; Soltani, A.; Delos, E.; Ducatteau, D.; Gaquiere, C.; Theron, D.; De Jaeger, J.C.; Lahreche, H.; Wedzikowski, L.; Langer, R.; Bove, P.; Bove, P.

Book ID: 120480777
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 128 KB
Volume: 25
Category: Article
ISSN: 0741-3106
DOI: 10.1109/LED.2004.830272

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