✦ LIBER ✦

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

✍ Scribed by Hyung-Seok Lee, ; Dong Seup Lee, ; Palacios, T

Book ID: 127364215
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 535 KB
Volume: 32
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2011.2114322

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-Performance AlGaN/GaN High Electron

High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC

✍ Kumar, V. ;Kuliev, A. ;Schwindt, R. ;Simin, G. ;Yang, J. ;Asif Khan, M. ;Adesida 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 1 views

Dopant-Free GaN/AlN/AlGaN Radial Nanowir

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

✍ Li, Yat (author);Xiang, Jie (author);Qian, Fang (author);Gradečak, Silvija (auth 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 418 KB

Dopant-Free GaN/AlN/AlGaN Radial Nanowir

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

✍ Li, Yat (author);Xiang, Jie (author);Qian, Fang (author);Gradečak, Silvija (auth 📂 Article 📅 2006 🏛 American Chemical Society 🌐 English ⚖ 418 KB

AlGaN/GaN high electron mobility transis

AlGaN/GaN high electron mobility transistors with InGaN back-barriers

✍ Palacios, T.; Chakraborty, A.; Heikman, S.; Keller, S.; DenBaars, S.P.; Mishra, 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 260 KB

Displacement Damage Effects in AlGaN/GaN

Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors

✍ Weaver, B. D.; Martin, P. A.; Boos, J. B.; Cress, C. D. 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 806 KB

Improved oxide passivation of AlGaN∕GaN

Improved oxide passivation of AlGaN∕GaN high electron mobility transistors

✍ Gila, B. P.; Hlad, M.; Onstine, A. H.; Frazier, R.; Thaler, G. T.; Herrero, A.; 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 285 KB