✦ LIBER ✦

AlGaN/GaN heterostructure field-effect transistors with multi-MgxNy/GaN buffer and Photo-CVD SiO2 gate dielectric

✍ Scribed by K.H. Lee; P.C. Chang; S.J. Chang; Y.K. Su

Book ID: 113916140
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 764 KB
Volume: 72
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.02.009

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

AlGaN/GaN metal-oxide semiconductor hete

AlGaN/GaN metal-oxide semiconductor heterostructure field-effect transistor with photo-chemical-vapor deposition SiO2gate oxide

✍ C. K. Wang; Y. Z. Chiou; S. J. Chang; Y. K. Su; B. R. Huang; T. K. Lin; S. C. Ch 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 167 KB

Normally-Off AlGaN/GaN Metal–Oxide–Semic

Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier

✍ Kim, Dong-Seok; Im, Ki-Sik; Kang, Hee-Sung; Kim, Ki-Won; Bae, Sung-Bum; Mun, Jae 📂 Article 📅 2012 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 1022 KB

A Novel Thin Al2O3 Gate Dielectric by EC

A Novel Thin Al2O3 Gate Dielectric by ECR-Plasma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors

✍ S. Ootomo; T. Hashizume; H. Hasegawa 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 245 KB

RF and DC characteristics in Al2O3/Si3N4

RF and DC characteristics in Al2O3/Si3N4insulated-gate AlGaN/GaN heterostructure field-effect transistors with regrown ohmic structure

✍ Maeda, Narihiko ;Makimura, Takashi ;Maruyama, Takashi ;Wang, Chengxin ;Hiroki, M 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 224 KB

## Abstract Al~2~O~3~/Si~3~N~4~ insulated‐gate AlGaN/GaN heterostructure field‐effect transistors (HFETs) have been fabricated, where the regrown ohmic structure was incorporated to reduce the contact resistance. Excellent DC and RF characteristics have been obtained together with the low gate leak