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AlGaAs/GaAs double-heterojunction high electron mobility transistors grown by low-pressure organometallic vapor phase epitaxy

✍ Scribed by Huang, Rong-Ting; Tu, Yung-Yi; Kasemset, Dumrong; Nouri, N.; Colvard, C.; Ackley, D.

Book ID: 121511414
Publisher: American Institute of Physics
Year: 1990
Tongue: English
Weight: 511 KB
Volume: 67
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.345244

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