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High-temperature DC characteristics of AlxGa0.52-x In0.48P/GaAs heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

✍ Scribed by Ho-Kwang Yow; Houston, P.A.; Chee-Mun Sidney Ng; Button, C.; Roberts, J.S.

Book ID: 114536341
Publisher: IEEE
Year: 1996
Tongue: English
Weight: 702 KB
Volume: 43
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.477586

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