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Al2O3/GeO2 stacked gate dielectrics formed by post-deposition oxidation of ultrathin metal Al layer directly grown on Ge substrates

✍ Scribed by Hideshima, Iori; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

Book ID: 122907696
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 854 KB
Volume: 12
Category: Article
ISSN: 1567-1739
DOI: 10.1016/j.cap.2012.04.007

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