Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS
β Scribed by Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew E.; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.
- Book ID
- 121529821
- Publisher
- AVS (American Vacuum Society)
- Year
- 2013
- Tongue
- English
- Weight
- 512 KB
- Volume
- 20
- Category
- Article
- ISSN
- 1055-5269
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In this article, the conduction mechanisms of metal-oxide-semiconductor with vacuum annealed Lanthana (La 2 O 3 ) oxide film are investigated. Lanthana films with thicknesses of 3.5, 4.7, and 11 nm were deposited by E-beam evaporation on n-Si (100), and annealed at various temperatures (300-500 8C)